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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1758
DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *Wide area of safe operation APPLICATIONS *For power switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -5 -12 30 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IB=0
B
2SA1758
MIN -60 -5
TYP.
MAX
UNIT V V
IE=-50A ,IC=0 IC=-6A; IB=-0.3A IC=-8A; IB=-0.4A IC=-6A; IB=-0.3A IC=-8A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-2V IC=-1A ; VCE=-10V
-0.3 -0.5 -1.2 -1.5 -10 -10 60 90 320
V V V V A A
MHz
hFE Classifications D 60-120 E 100-200 F 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1758
Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)
3

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